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Product material introduction
Perfluorinated series
| Material | Category | Maximum temperature | Features | Application |
| FP-FF | FFKM | 230℃ | Highest chemical resistance | hemical process, chemical equipment |
| FP-FFW | FFKM | 230℃ | Plasma resistance, chemical resistance | Dry etching process |
| FP-FFS/W | FFKM | 330℃ | The highest temperature, the highest chemical resistance | Furnace tube, high temperature equipment |
| FP-FFH90 | FFKM | 280℃ | Explosion-proof, highest chemical resistance | Petrochemical equipment |
| FP-FFHW | FFKM | 280℃ | CVD plasma resistance | CVD process |
| FP-FFN | FFKM | 300℃ | No pollution when exposed to plasma | Dry etching and CVD process |
| FP-FFP | FFKM | 230℃ | No pollution and super low dissolution when being plasma | Semiconductor wet process |
Semi-fluorine series: part 1
| Material | Category | Maximum temperature | Features | Application |
| FP-DEB | FFKM-e | 200℃ | Chemical resistance | chemical process, chemical equipment |
| FP-DEW | FFKM-e | 180℃ | Plasma resistance, chemical resistance | Dry etching process |
| FP-DEP | FFKM-e | 200℃ | Super low dissolution | Semiconductor wet process |
| FP-AP | FEPM | 230℃ | Resistant to strong acids, strong bases, and strong amines | Chemical process, chemical equipment |
| FP-APP | FEPM | 200℃ | Super low dissolution | Semiconductor wet process |
| FP-APC | FEPM | 150℃ | Low hardness, no filling | Dry process, Chemical process |
| FP-APHW | FEPM | 250℃ | High temperature resistance, low pollution | Semiconductor CVD process |
Semi-fluorine series: part 2
| Material | Category | Maximum temperature | Features | Application |
| FP-3F | Ternary copolymer FKM | 200 | Strong acid resistance | Chemical process, chemical equipment |
| FP-3FW | Ternary copolymer FKM | 200 | Plasma resistance | Dry etching process |
| FP-3FH | Ternary copolymer FKM | 250 | High temperature resistance | High temperature process, vacuum equipment |
| FP-3F90 | Ternary copolymer FKM | 200 | Explosion-proof and chemical resistance | Petrochemical equipment |
| FP-DL | Ternary copolymer FKM | 200 | Low temperature and chemical resistance | Semiconductor wet process |
| FP-DD | Ternary copolymer FKM | 200 | Conductivity, anti-static | Dry process, Chemical process |
Chemical Resistance Guide
| Chemicals | FFKM | FFKM-e | FEPM | 3-FKM |
| Inorganic acids:Sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid | ◎ | ◎ | ◎ | ◎ |
| Inorganic bases: sodium hydroxide, potassium hydroxide, ammonium hydroxide | ◎ | ◎ | ◎ | △ |
| Organic acids: acetic acid, formic acid | ◎ | ◎ | ○ | △ |
| Organic acids: ether amine, methyl ether amine | ◎ | △ | ◎ | × |
| Polar solvents: acetone, MEK, ether acetic acid | ◎ | ○ | × | × |
| Non-polar solvents: toluene, hexane, xylene | ◎ | ◎ | × | ○ |
| Solvent: methanol, ethanol, IPA | ◎ | ◎ | ◎ | ◎ |
| Nitriding liquid: NMP, THF | ◎ | △ | × | × |
| Washing liquid: ozone water, chlorine water | ◎ | ◎ | ◎ | ○ |
| Oil type: natural oil, natural gas, methane | ◎ | ◎ | ◎ | ◎ |
| Super oxidation type: odor, halogen gas, UV light | ◎ | ◎ | ○ | ○ |
◎：excellent ○：good △： static only ×：not recommended
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